Skip to main content
Patent
Method for significant reduction of dislocations for a ve...
A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of formi...
A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate.