A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate.
US-7776636-B2
US-7776636-B2 • August 2010 • Manufacturing & Industrial
Method for significant reduction of dislocations for a very high A1 composition A1GaN layer